| PART |
Description |
Maker |
| SSF2715 |
Extremely high dv/dt capability
|
Silikron Semiconductor Co
|
| CZT2000 |
NPN SILICON EXTREMELY HIGH VOLTAGE DARLINGTON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
| CES2321 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| FDN8601 |
High performance trench technology for extremely low rDS(on)
|
TY Semiconductor Co., Ltd
|
| AP2121 AP2121AK-1.8TRE1 AP2121AK-3.0TRE1 AP2121AK- |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
BCD Semiconductor Manuf...
BCD Semiconductor Manufacturing Limited
http://
|
| SI2301 |
High dense cell design for extremely low RDS(ON)
|
MAKO SEMICONDUCTOR CO.,...
|
| CES2303 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| CES2305 |
High dense cell design for extremely low RDS(ON)
|
TY Semiconductor Co., Ltd
|
| AP2120N-1.8TRG1 AP2120N-2.5TRG1 AP2120N-5.0TRG1 AP |
HIGH SPEED, EXTREMELY LOW NOISE LDO REGULATOR
|
Diodes
|
| CES2308 |
High dense cell design for extremely low RDS(ON).
|
TY Semiconductor Co., Ltd
|
| CMPTA4410 |
SURFACE MOUNT EXTREMELY HIGH VOLTAGE NPN SILICON TRANSISTOR
|
Central Semiconductor Corp
|
| STBP60L60A |
Super high dense cell design for extremely low RDS(ON).7
|
SamHop Microelectronics...
|
